Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature cvd systems

ABSTRACT

A method and apparatus for delivering precursor materials to a processing chamber is provided. In one embodiment, a deposition apparatus is provided. The apparatus includes a chamber having a longitudinal axis, and a gas distribution assembly coupled to a sidewall of the chamber. The gas distribution assembly comprises a plurality of plenums coupled to one or more gas sources, an energy source positioned to provide energy to each of the plurality of plenums, and a variable power source coupled to the energy source, wherein the gas distribution assembly provides a flow path through the chamber that is normal to the longitudinal axis of the chamber.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.11/937,388 (Attorney Docket No. 11249), filed Nov. 8, 2007, which claimsbenefit of U.S. Provisional Patent Application Ser. No. 60/866,799(Attorney Docket No. 11249L), filed Nov. 21, 2006, both of which areincorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Embodiments of the present invention generally relate to preheatinggases for a semiconductor fabrication process. More specifically, topreheating gases used in deposition and etch reactions on asemiconductor substrate, such as an epitaxial deposition process orother chemical vapor deposition process.

2. Description of the Related Art

Epitaxial growth of silicon and/or germanium-containing films has becomeincreasingly important due to new applications for advanced logic andDRAM devices, among other devices. A key requirement for theseapplications is a lower temperature process so that device features willnot be damaged during fabrication. The lower temperature process is alsoimportant for future markets where the feature sizes are in the range of45 nm to 65 nm, and avoidance of the diffusion of adjacent materialsbecomes critical. Lower process temperatures may also be required forboth substrate cleaning prior to growth of the silicon and/orgermanium-containing epitaxial film and during selective or blanketgrowth of the epitaxial film. By selective growth, it is generally meantthat the film grows on a substrate which includes more than one materialon the substrate surface, wherein the film selectively grows on asurface of a first material of said substrate, with minimal to no growthon a surface of a second material of said substrate.

Selective and blanket (non-selectively grown) epitaxial films containingsilicon and/or germanium, and strained embodiments of such epitaxialfilms, which are grown at temperatures of less than about 700° C., arerequired for many current semiconductor applications. Further, it may bedesirable to have the removal of native oxide and hydrocarbons prior toformation of the epitaxial film accomplished at temperatures in therange of about 650° C. or less, although higher temperatures may betolerated when the removal time period is shortened.

This lower temperature processing is not only important to forming aproperly functioning device, but it minimizes or prevents the relaxationof metastable strain layers, helps to prevent or minimize dopantdiffusion, and helps to prevent segregation of dopant within theepitaxial film structure. Suppression of facet formation and shortchannel effects, which is enabled by low temperature processing (lowthermal budget processing), is a significant factor for obtaining highperformance devices.

Current techniques for selective and blanket epitaxial growth of dopedand undoped silicon (Si), germanium (Ge), SiGe, and carbon containingfilms, are typically carried out using reduced pressure chemical vapordeposition (CVD), which is also referred to as RPCVD or low pressure CVD(LPCVD). The typical reduced pressure process, such as below about 200Torr, is carried out at temperatures above about 700° C., typicallyabove 750° C., to get an acceptable film growth rate. Generally, theprecursor compounds for film deposition are silicon and/or germaniumcontaining compounds, such as silanes, germanes, combinations thereof orderivatives thereof. Generally, for selective deposition processes,these precursor compounds are combined with additional reagents, such aschlorine (Cl₂), hydrogen chloride (HCl), and optionally hydrogen bromide(HBr), by way of example. A carbon-containing silane precursor compound,for example methylsilane (CH₃SiH₃), may be used as a dopant. In thealternative, inorganic compounds, such as diborane (B₂H₆), arsine(AsH₃), and phosphine (PH₃), by way of example, may also be used asdopants.

In a typical LPCVD process to deposit an epitaxial layer on a substrate,precursors are injected into a processing region in a chamber by a gasdistribution assembly, and the precursors are energized above thesurface of a substrate in the chamber by irradiation of the precursorsin the processing region, which is typically low wavelength radiation,such as in the ultraviolet and/or infrared spectrum. Plasma generationmay also be used to dissociate the reactants. The substrate temperatureis typically elevated to assist in adsorption of reactive species and/ordesorption of process byproducts, and it is desirable to minimize thedelta between the precursor temperature in the processing region and thesubstrate temperature in order to optimize the energization of theprecursors and enhance the deposition or desorption process.

To enable a more efficient dissociation process, it is desirable topreheat the precursors prior to delivery to the processing region toenable faster and more efficient dissociation of the precursors abovethe substrate. Various methods to heat the precursors have beenemployed, but challenges remain in stabilizing the preheat temperatureprior to energization above the substrate surface. For example, theprecursor temperature may be elevated to a desired temperature at orbefore introduction to the gas distribution assembly, but the precursortemperature may be lowered by thermal losses in flowing through the gasdistribution assembly and/or along the flow path to the processingregion above the substrate.

Therefore, there is a need in the art for an apparatus and method tominimize the temperature range delta between the introductiontemperature of precursors and the processing region, and an apparatusand method of preheating precursors at the gas introduction point thatalso minimizes heat loss prior to dissociation of the precursor.

SUMMARY OF THE INVENTION

Embodiments described herein relate to an apparatus and method fordelivering a process gas to a processing region within a chamber.

In one embodiment, a deposition apparatus is provided. The depositionapparatus includes a chamber having a longitudinal axis, and a gasdistribution assembly coupled to a sidewall of the chamber. The gasdistribution assembly includes a plurality of plenums coupled to one ormore gas sources, an energy source positioned to provide energy to eachof the plurality of plenums, and a variable power source coupled to theenergy source, wherein the gas distribution assembly provides a flowpath through the chamber that is normal to the longitudinal axis of thechamber.

In another embodiment, a deposition apparatus is provided. The apparatusincludes a chamber having a longitudinal axis, and a gas distributionassembly coupled to a sidewall of the chamber. the gas distributionassembly includes an injection block having at least one inlet todeliver a precursor gas to a plurality of plenums from at least two gassources, and at least one energy source positioned to provide energy tothe precursor gas from one or both of the at least two gas sources andeach of the plurality of plenums, wherein the gas distribution assemblyprovides a flow path through the chamber that is normal to thelongitudinal axis of the chamber.

In another embodiment, a method of delivering a preheated precursor gasto a processing region in a chamber is described. The method includesproviding a precursor gas to a gas distribution assembly incommunication with the processing region, heating the precursor gas atthe point of introduction in the gas distribution assembly usingnon-thermal energy, and maintaining at least a portion of the heatprovided to the precursor gas along a flow path defined between thepoint of introduction and the processing region.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention can be understood in detail, a more particular description ofthe invention, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 is a schematic cross-sectional view of one embodiment of adeposition chamber.

FIG. 2 is a schematic top view of a portion of the deposition chambershown in FIG. 1.

FIG. 3 is a schematic side view of one embodiment of a gas distributionassembly.

FIG. 4 is an isometric schematic view of another embodiment of a gasdistribution assembly.

FIG. 5 is an isometric schematic view of another embodiment of a gasdistribution assembly.

FIG. 6 is an isometric schematic view of another embodiment of a gasdistribution assembly.

To facilitate understanding, identical reference numerals have beenused, wherever possible, to designate identical elements that are commonto the figures. It is also contemplated that elements disclosed in oneembodiment may be beneficially utilized on other embodiments withoutspecific recitation.

DETAILED DESCRIPTION

FIG. 1 is a schematic cross-sectional view of a deposition chamber 100configured for epitaxial deposition, which may be part of a CENTURA®integrated processing system available from Applied Materials, Inc., ofSanta Clara, Calif. The deposition chamber 100 includes housingstructure 101 made of a process resistant material, such as aluminum orstainless steel, for example 316 L stainless steel. The housingstructure 101 encloses various functioning elements of the processchamber 100, such as a quartz chamber 130, which includes an upperchamber 105, and a lower chamber 124, in which a processing volume 118is contained. Reactive species are provided to the quartz chamber 130 bya gas distribution assembly 150, and processing byproducts are removedfrom processing volume 118 by an outlet 138, which is typically incommunication with a vacuum source (not shown).

A substrate support 117 is adapted to receive a substrate 114 that istransferred to the processing volume 118. The substrate support 117 isdisposed along a longitudinal axis 102 of the deposition chamber 100.The substrate support may be made of a ceramic material or a graphitematerial coated with a silicon material, such as silicon carbide, orother process resistant material. Reactive species from precursorreactant materials are applied to surface 116 of the substrate 114, andbyproducts may be subsequently removed from surface 116. Heating of thesubstrate 114 and/or the processing volume 118 may be provided byradiation sources, such as upper lamp modules 110A and lower lampmodules 110B.

In one embodiment, the upper lamp modules 110A and lower lamp modules1106 are infrared (IR) lamps. Non-thermal energy or radiation from lampmodules 110A and 1108 travels through upper quartz window 104 of upperquartz chamber 105, and through the lower quartz portion 103 of lowerquartz chamber 124. Cooling gases for upper quartz chamber 105, ifneeded, enter through an inlet 112 and exit through an outlet 113.Precursor reactant materials, as well as diluent, purge and vent gasesfor the chamber 100, enter through gas distribution assembly 150 andexit through outlet 138.

The low wavelength radiation in the processing volume 118, which is usedto energize reactive species and assist in adsorption of reactants anddesorption of process byproducts from the surface 116 of substrate 114,typically ranges from about 0.8 μm to about 1.2 μm, for example, betweenabout 0.95 μm to about 1.05 μm, with combinations of various wavelengthsbeing provided, depending, for example, on the composition of the filmwhich is being epitaxially grown. In another embodiment, the lampmodules 110A and 1108 may be ultraviolet (UV) light sources. In oneembodiment, the UV light source, is an excimer lamp. In anotherembodiment, UV light sources may be used in combination with IR lightsources in one or both of the upper quartz chamber 105 and lower quartzchamber 124. An example of UV radiation sources used in combination withIR radiation sources can be found in U.S. patent application Ser. No.10/866,471, filed Jun. 10, 2004, which published on Dec. 15, 2005, asUnited States patent publication No. 2005/0277272, which is incorporatedby reference in its entirety.

The component gases enter the processing volume 118 via gas distributionassembly 150. Gas flows from the gas distribution assembly 150 and exitsthrough port 138 as shown generally at 122. Combinations of componentgases, which are used to clean/passivate a substrate surface, or to formthe silicon and/or germanium-containing film that is being epitaxiallygrown, are typically mixed prior to entry into the processing volume.The overall pressure in the processing volume 118 may be adjusted by avalve (not shown) on the outlet port 138. At least a portion of theinterior surface of the processing volume 118 is covered by a liner 131.In one embodiment, the liner 131 comprises a quartz material that isopaque. In this manner, the chamber wall is insulated from the heat inthe processing volume 118.

The temperature of surfaces in the processing volume 118 may becontrolled within a temperature range of about 200° C. to about 600° C.,or greater, by the flow of a cooling gas, which enters through a port112 and exits through port 113, in combination with radiation from upperlamp modules 110A positioned above upper quartz window 104. Thetemperature in the lower quartz chamber 124 may be controlled within atemperature range of about 200° C. to about 600° C. or greater, byadjusting the speed of a blower unit which is not shown, and byradiation from the lower lamp modules 1106 disposed below lower quartzchamber 124. The pressure in the processing volume 118 may be betweenabout 0.1 Torr to about 600 Torr, such as between about 5 Torr to about30 Torr.

The temperature on the substrate 114 surface 116 may be controlled bypower adjustment to the lower lamp modules 1106 in lower quartz chamber124, or by power adjustment to both the upper lamp modules 110Aoverlying upper quartz chamber 104, and the lower lamp modules 1108 inlower quartz chamber 124. The power density in the processing volume 118may be between about 40 W/cm² to about 400 W/cm², such as about 80 W/cm²to about 120 W/cm².

In one aspect, the gas distribution assembly 150 is disposed normal to,or in a radial direction 106 relative to, the longitudinal axis 102 ofthe chamber 100 or substrate 114. In this orientation, the gasdistribution assembly 150 is adapted to flow process gases in a radialdirection 106 across, or parallel to, the surface 116 of the substrate114. In one application, the process gases are preheated at the point ofintroduction to the chamber 100 to initiate preheating of the gasesprior to introduction to the processing volume 118, and/or to breakspecific bonds in the gases. In this manner, surface reaction kineticsmay be modified independently from the thermal temperature of thesubstrate 114.

FIG. 2 is a schematic top view of a portion of a deposition chamber 100similar the chamber shown in FIG. 1, with the exception of the substrate114 not being shown. A gas distribution assembly 150 is shown coupled tothe housing structure 101. The gas distribution assembly 150 includes aninjection block 210 coupled to one or more gas sources 140A and 140B.The gas distribution assembly 150 also includes a non-thermal heatingassembly 220, which includes a plurality of radiant heat sources, suchas IR lamps 225A-225F disposed at least partially in the injection block210. The injection block 210 also includes one or more plenums 224 _(N)disposed upstream of the openings 158 of a perforated plate 154, such asinner plenum 224 ₂ and outer plenums 224 ₁ and 224 ₃, and the IR lamps225A-225F are disposed at least partially in the plenums 224 _(N).

Although six IR lamps are shown, the gas distribution assembly 150 mayinclude more or less IR lamps. The IR lamps 225A-225F may includehalogen type lamps, or rapid thermal processing (RTP) lamps with awattage between about 300 watts to about 1200 watts, depending on theintensity of the radiation needed for the particular process, and/or thenumber of IR lamps used with the gas distribution assembly 150. In theembodiment shown, the IR lamps 225A-225F are RTP style lamps having awattage between about 500 watts to about 750 watts, for example betweenabout 500 watts to about 550 watts with about an 80 volt powerapplication. In one application, the power density provided by each ofthe IR lamps 225A-225F may be between about 25 W/cm² to about 40 W/cm²in the plenums 224 _(N). In one embodiment, the IR lamps 225A-225Fprovide a variable temperature in each plenum 224 _(N) of about 50° C.to about 250° C.

In operation, precursors to form Si and SiGe blanket or selective filmsare provided to the gas distribution assembly 150 from the one or moregas sources 140A and 140B. The gas sources 140A, 140B may be coupled thegas distribution assembly 150 in a manner configured to facilitateintroduction zones within the gas distribution assembly 150, such as anouter zone that is shown as outer plenums 224 ₁ and 224 ₃, and an innerzone, shown as inner plenum 224 ₂. The gas sources 140A, 140B mayinclude valves (not shown) to control the rate of introduction into theplenums 224 _(N). Alternatively, the plenums 224 _(N) may be incommunication with one gas source, or other gas sources may be added tocreate more introduction zones.

The gas sources 140A, 140B may include silicon precursors such assilanes, including silane (SiH₄), disilane (Si₂H₆,), dichlorosilane(SiH₂Cl₂), hexachlorodisilane (Si₂Cl₆), dibromosilane (SiH₂Br₂), higherorder silanes, derivatives thereof, and combinations thereof. The gassources 140A, 140B may also include germanium containing precursors,such as germane (GeH₄), digermane (Ge₂H₆), germanium tetrachloride(GeCl₄), dichlorogermane (GeH₂Cl₂), derivatives thereof, andcombinations thereof. The silicon and/or germanium containing precursorsmay be used in combination with hydrogen chloride (HCl), chlorine gas(Cl₂), hydrogen bromide (HBr), and combinations thereof. The gas sources140A, 140B may include one or more of the silicon and germaniumcontaining precursors in one or both of the gas sources 140A, 140B. Forexample, the gas source 140A, which may be in communication with theouter plenums 224 ₁ and 224 ₃, may include precursor materials, such ashydrogen gas (H₂) or chlorine gas (Cl₂), while gas source 140B mayinclude silicon and/or germanium containing precursors, derivativesthereof, or combinations thereof.

The precursor materials from the gas sources 140A, 140B are delivered tothe plenums 224 _(N) and the non-thermal energy from the IR lamps225A-225F illuminates the precursor materials with IR energy in theplenums 224 _(N) at the point of introduction. The wavelength of thenon-thermal energy resonates and excites the precursor materials bytaking advantage of the vibrational stretch mode of the precursormaterials, and the energy is absorbed into the precursor materials,which preheats the precursor materials prior to entry into theprocessing volume. The injection block 210, which contains the IR lamps225A-225F, is made of a material with high reflectivity, such asstainless steel, which may also include a polished surface to increasereflectivity. The reflective quality of the material for the injectionblock 210 may also act as an insulator to minimize heating of theinjection block, thus increasing safety to personnel that may be inclose proximity to the injection block 210. In one embodiment, theinjection block 210 comprises stainless steel and the interior surfacesof the plenums 224 _(N) are polished. In another embodiment, theinjection block 210 comprises aluminum and the interior surfaces of theplenums 224 _(N) are polished.

The precursor materials enter the processing volume 118 through openings158 in the perforated plate 154 in this excited state, which in oneembodiment is a quartz material, having the openings 158 formedtherethrough. In this embodiment, the perforated plate is transparent toIR energy, and may be made of a clear quartz material. In otherembodiments, the perforated plate 154 may be any material that istransparent to IR energy and is resistant to process chemistry and otherprocess parameters. The energized precursor materials flow toward theprocessing volume 118 through a plurality of holes 158 in the perforatedplate 154, and through a plurality of channels 152 _(N). A portion ofthe photons and non-thermal energy from the IR lamps 225A-225F alsopasses through the holes 158, the perforated plate 154, and channels 152_(N), facilitated by the high reflective material and/or surface of theinjection block 210, thereby illuminating the flow path of the precursormaterials (shown as arrow 325 in FIG. 3). In this manner, thevibrational energy of the precursor materials may be maintained from thepoint of introduction to the processing volume 118 along the flow path.

Intensity of the IR wavelengths in the plurality of IR lamps 225A-225Fmay be increased or decreased depending on the process. In oneapplication, intensity of the IR lamps may be controlled by filterelements 405 (FIG. 4), and window 610 (FIG. 6). In another embodiment, asheath 315 (FIG. 3) may be disposed over at least a portion of the IRlamps 225A-225F, and the sheath may be configured as a filter element tocontrol the intensity of the lamps. In one example, the filter elementsmay be a sleeve, sheet, or lens adapted to modulate bandwidth byselective transmission of specific wavelengths. The filter elements maybe used on at least one of the IR lamps 225A-225F or all of the IR lamps225A-225F. Alternatively, different filter elements may be used ondifferent IR lamps 225A-225F. In one example, the outer plenums 224 ₁and 224 ₃ may receive a first level of intensity by using a first filterconfigured to absorb or block specific spectra, while the inner plenum224 ₂ receives a second level of intensity by using a second filterconfigured to absorb or block a different specific spectra.

In another application that may be used alone or in combination withfilters, the IR intensity in the multiple zones defined by the plenums224 _(N) may be individually controlled by leads 226A-226F coupled to apower source 205 and a controller. For example, the outer plenums 224 ₁and 224 ₃ may receive a first level of intensity, while the inner plenum224 ₂ receives a second level of intensity by variation of signalsprovided to the IR lamps 225A-225F. Alternatively, each IR lamp225A-225F may be controlled separately by variation of signals providedby the controller. The intensity of the IR lamps 225A-225F may becontrolled in an open-loop mode, or a closed-loop mode. Thus, theprecursor materials enter the processing volume 118 in a preheated orenergized state, which may lessen the adsorption or desorption timeframe or disassociation time, which, in turn, increases throughput.

FIG. 3 is a schematic side view of one embodiment of a gas distributionassembly 150 as shown in FIGS. 1 and 2. An aperture 305 is formed in theinjection block 210 to receive a portion of an IR lamp 225C, which is atleast partially inserted into the plenum 224 ₂. Precursor materials aresupplied to the plenum 224 ₂ by a port 320 disposed in the injectionblock 210. The aperture 305 may be sized slightly larger than the IRlamp 225C to allow space for a sheath 315 adapted to encase a portion ofthe IR lamp 225C. In one embodiment, the sheath 315 is made of amaterial transparent to IR energy, such as quartz, magnesium fluoride,calcium fluoride, sapphire, as examples. In another embodiment, thesheath 315 may be adapted as a filter element to modulate bandwidth byselective transmission of specific wavelengths. Temperature sensingdevices (not shown), such as thermocouples, may be disposed in theinjection block 210 to monitor the sheath temperature and/or thetemperature in the plenum 224 ₂. The aperture 305 also includes a largerdiameter portion at the end opposite the plenum 224 ₂ to receive a hightemperature seal 323, for example an o-ring made of a polymeric materialadapted to withstand elevated temperatures, such as a Teflon® material,polyethernitrile, polyetheretherketone (PEEK), polyaryletherketone(PAEK), among others.

Referring to FIGS. 2 and 3, the IR lamps 225A-225F are coupled to acooling device 310 to cool the IR lamps 225A-225F. In one application,the cooling device 310 includes a conduit, such as a tubular member 156having an inlet port 260A and an outlet port 260B, and is adapted toprovide a coolant to a plurality of IR lamps 225A-225F. In otherembodiments (not shown in FIGS. 2 and 3), the cooling device may behousing coupled to a single IR lamp. The cooling device 310 may comprisea cooling fluid, such as a liquid or gas from a coolant source 311 thatcirculates through the tubular member 156 to facilitate heat transferfrom the IR lamps 225A-225F. The tubular member 156 also includesapertures 306 adapted to receive a portion of the IR lamps 225A-225F. Atleast one of the apertures includes a fitting 308, such as a stainlesssteel VCO fitting, adapted to receive a portion of the IR lamp and sealthe tubular member 156. In one embodiment, the cooling fluid from thecoolant source 311 is nitrogen gas, which is circulated through thetubular member 156.

In operation, in reference to FIG. 3, precursor materials from gassource 140B are introduced to the plenum 224 ₂ by the port 320, and theprecursor materials are radiantly heated by the IR lamp 225C at thispoint of introduction. The lower partial pressure in the processingvolume 118 (not shown in this view) creates a flow path 325 through theopening 158 and the channel 152 _(N). The precursor materials areenergized in the plenum 224 ₂ and remain energized along the flow path325 by the non-thermal energy reflected and/or passing into the channel152 _(N). Thus, preheating of the precursor materials, and maintenanceof the energized precursor materials, is enhanced. Using thisnon-thermal energy minimizes or eliminates the need for resistive orconvective heating elements in or near the precursor introduction point,which may improve safety of the use of the chamber, and minimizes theneed for extended cooling systems for the chamber.

FIGS. 4-6 are isometric schematic views of various embodiment of a gasdistribution assembly 150 that may be coupled with the chamber 100 ofFIG. 1. The gas distribution assembly 150 includes an injection block210 having at least one IR lamp 425 in communication with a gas source,such as gas source 140A and/or 140B coupled to ports 320. While notshown, each port is in communication with a plenum 224 _(N) disposedwithin the gas injection block 210. In the embodiments depicted in FIGS.4-6, each IR lamp 425 is individually coupled to the injection block 210by a housing 410 that provides electrical connections (not shown) andcooling capabilities. In one embodiment, each housing 410 includes aport 415 that may be coupled to the coolant source 311 (FIG. 3). In oneapplication, each port 415 functions as an inlet and an outlet forcooling fluid.

In the embodiment shown in FIG. 4, a plurality of IR lamps 425 aredisposed in a radial direction to the chamber 100 (FIG. 1). In thisembodiment, each IR lamp 425 is disposed normal to a gas injection pathas defined by the directional orientation of the ports 320.Additionally, one or more IR lamps 425 may include a filter element 405adapted to modulate bandwidth by selective transmission of specificwavelengths from the IR lamp 425. The filter element 405 may be asheath, a plate, a sheet, or any article or device adapted blockspecific wavelengths.

In the embodiment shown in FIG. 5, a plurality of IR lamps 425 aredisposed in a parallel orientation relative to the longitudinal axis ofthe chamber 100 (FIG. 1). In this embodiment, each IR lamp 425 isdisposed substantially parallel to a gas injection path as defined bythe directional orientation of the ports 320. While not shown, one ormore IR lamps 425 may include a filter element (FIG. 4) adapted tomodulate bandwidth by selective transmission of specific wavelengthsfrom the IR lamp 425.

In the embodiment shown in FIG. 6, a single IR lamp 425 is disposed in aradial direction to the chamber 100 (FIG. 1). In this embodiment, the IRlamp 425 is disposed normal to a gas injection path as defined by thedirectional orientation of the ports 320. Additionally, the gasinjection block 210 may include a plate 610 positioned between the IRlamp 425 and plenums 224 _(N) (not shown in this view). In oneembodiment, the plate 610 may be configured as a window made of amaterial that is transparent to IR light. In another embodiment, theplate 610 may be configured as a filter element adapted to modulatebandwidth by selective transmission of specific wavelengths from the IRlamp 425. In yet another embodiment, the plate 610 may be adapted as afilter element having multiple zones 615A, 615B adapted block specificwavelengths in each zone.

EXAMPLES

In one example, a blanket SiGe film was formed on a 300 mm wafer in thechamber 100 using the gas distribution assembly 150 as shown in FIG. 2.The chamber was provided with a pressure of about 10 Torr and a surfacetemperature in the processing region 118 of about 750° C. with a powerdensity of about 45 W/cm². Dichlorosilane and germane was introduced tothe processing region 118 from the gas distribution assembly 150 atabout 0.5% and 0.01%, respectively. Non-thermal energy from the IR lamps225A-225F operating at a power of about 30 watts produced a temperaturemeasured at the sheath 315 of about 138° C. This produced a noticeabledecrease in film growth rate and an increase in the percentage ofgermanium in the film.

In another example, a selective SiGe film was formed on a 300 mm waferin the chamber 100 using the gas distribution assembly 150 as shown inFIG. 2. The chamber was provided with a pressure of about 10 Torr and asurface temperature in the processing region 118 of about 750° C. with apower density of about 45 W/cm². Dichlorosilane and germane wasintroduced to the processing region 118 from the gas distributionassembly 150 at about 0.5% and 0.01%, respectively. Hydrogen chloridewas also provided at about 0.5%. Non-thermal energy from the IR lamps225A-225F operating at a power of about 30 watts produced a temperaturemeasured at the sheath 315 of about 138° C. This produced a significantdecrease in film growth rate and an improved film profile.

In another example, a selective SiGe film was formed on a 300 mm waferin the chamber 100 using the gas distribution assembly 150 as shown inFIG. 2. The chamber was provided with a pressure of about 10 Torr and asurface temperature in the processing region 118 of about 750° C. with apower density of about 45 W/cm². Silane and hydrogen chloride wasintroduced to the processing region 118 from the gas distributionassembly 150 at about 0.25% and 1.125%, respectively. Non-thermal energyfrom the IR lamps 225A-225F operating at a power of about 25 wattsproduced a temperature measured at the sheath 315 of about 110° C. Thisproduced a noticeable increase in percentage of germanium in the filmand a decrease in film growth rate.

In another example, a selective SiGe film was formed on a 300 mm waferin the chamber 100 using the gas distribution assembly 150 as shown inFIG. 2. The chamber was provided with a pressure of about 10 Torr and asurface temperature in the processing region 118 of about 750° C. with apower density of about 45 W/cm². Silane and germane was introduced tothe processing region 118 from the gas distribution assembly 150 at0.25% and 1.225%, respectively. Hydrogen chloride was also provided atabout 0.575%. Non-thermal energy from the IR lamps 225A-225F operatingat a power of about 25 watts produced a temperature measured at thesheath 315 of about 110° C. This produced a significant decrease in filmgrowth rate (about 56.5 Å/minute) and an increase in the percentage ofgermanium in the film (about 0.25%).

While the foregoing is directed to embodiments of the present invention,other and further embodiments of the invention may be devised withoutdeparting from the basic scope thereof, and the scope thereof isdetermined by the claims that follow.

1. A deposition apparatus, comprising: a chamber having a longitudinalaxis; and a gas distribution assembly coupled to a sidewall of thechamber, the gas distribution assembly comprising: a plurality ofplenums coupled to one or more gas sources; an energy source positionedto provide energy to each of the plurality of plenums; and a variablepower source coupled to the energy source, wherein the gas distributionassembly provides a flow path through the chamber that is normal to thelongitudinal axis of the chamber.
 2. The apparatus of claim 1, whereinthe energy source is an infrared lamp.
 3. The apparatus of claim 1,wherein the energy source is a plurality of infrared lamps and at leastone of the plurality of infrared lamps is at least partially disposed ineach plenum.
 4. The apparatus of claim 1, wherein the energy source is aplurality of infrared lamps and the variable power source comprises amulti-zone power source coupled to each of the infrared lamps.
 5. Theapparatus of claim 1, wherein at least a portion of the plurality ofplenums comprise an inner zone and an outer zone and energy to each zoneis independently controlled.
 6. The apparatus of claim 1, wherein one ofthe chamber and gas distribution assembly comprises a perforated quartzmaterial that is transparent to infrared light and positioned in theflow path.
 7. The apparatus of claim 1, further comprising: a perforatedplate bounding at least one side of each of the plurality of plenums. 8.The apparatus of claim 7, wherein the perforated plate comprises atransparent material.
 9. The apparatus of claim 1, wherein each energysource is coupled to a coolant source.
 10. The apparatus of claim 1,further comprising: a filter element positioned to block a portion ofthe energy from the energy source.
 11. A deposition apparatus,comprising: a chamber having a longitudinal axis; and a gas distributionassembly coupled to a sidewall of the chamber, the gas distributionassembly comprising: an injection block having at least one inlet todeliver a precursor gas to a plurality of plenums from at least two gassources; and at least one energy source positioned to provide energy tothe precursor gas from one or both of the at least two gas sources andeach of the plurality of plenums, wherein the gas distribution assemblyprovides a flow path through the chamber that is normal to thelongitudinal axis of the chamber.
 12. The apparatus of claim 11, furthercomprising: a perforated plate bounding at least one side of each of theplurality of plenums.
 13. The apparatus of claim 11, further comprising:a coolant source in communication with the at least one energy source.14. The apparatus of claim 11, wherein the energy source is a pluralityof infrared lamps and at least one of the plurality of infrared lamps isat least partially disposed in each plenum.
 15. A method of delivering apreheated precursor gas to a processing region in a chamber, comprising:providing a precursor gas to a gas distribution assembly incommunication with the processing region; heating the precursor gas atthe point of introduction in the gas distribution assembly usingnon-thermal energy; and maintaining at least a portion of the heatprovided to the precursor gas along a flow path defined between thepoint of introduction and the processing region.
 16. The method of claim15, further comprising: providing non-thermal energy to the flow path.17. The method of claim 15, wherein the non-thermal energy is infraredlight.
 18. The method of claim 15, wherein the flow path issubstantially normal to a longitudinal axis of the chamber and thenon-thermal energy is at least one infrared lamp disposed substantiallyparallel to the flow path.
 19. The method of claim 15, wherein the flowpath is substantially normal to a longitudinal axis of the chamber andthe non-thermal energy is at least one infrared lamp disposedsubstantially normal to the flow path.
 20. The method of claim 15,wherein the point of introduction comprises one or more introductionzones and the intensity of the non-thermal energy to the one or moreintroduction zones is independently controlled by a variable powersource.
 21. The method of claim 15, wherein the point of introductioncomprises one or more introduction zones and the intensity of thenon-thermal energy to the one or more introduction zones isindependently controlled by a filter element.